| PART |
Description |
Maker |
| IDT72V3672 IDT72V3672L10PF IDT72V3672L10PQF IDT72V |
3.3 VOLT CMOS SyncBiFIFO
|
IDT[Integrated Device Technology]
|
| IDT723674 |
CMOS SyncBiFIFO WITH BUS-MATCHING 与巴士的CMOS SyncBiFIFO -匹配
|
Integrated Device Technology, Inc.
|
| IDT72V3634L10PF IDT72V3634L15PF8 |
3.3 VOLT CMOS SyncBiFIFO WITH BUS-MATCHING 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2
512 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP128
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT723644 IDT723624 |
CMOS SyncBiFIFOTM WITH BUS-MATCHING
CMOS SyncBiFIFO?
|
IDT[Integrated Device Technology]
|
| IDT723674 IDT723674L12PF IDT723674L15PF IDT723664 |
CMOS SyncBiFIFO WITH BUS-MATCHING
|
IDT[Integrated Device Technology]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| 74LCX646RM13TR 74LCX646 74LCX646M1R 74LCX646TTR |
LOW VOLT. CMOS OCTAL BUS TRANSCEIVER/REGISTER WITH 5 VOLT TOLERANT INPUTS AND OUTPUTS(3-STATE)
|
STMICROELECTRONICS[STMicroelectronics]
|
| S29CD032G S29CD032G0JFAI000 S29CD032G0JFAI002 S29C |
CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
From old datasheet system
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
SPANSION[SPANSION]
|
| AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory
Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区闪存
Connector 连接
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区闪存
256K X 8 FLASH 3V PROM, 90 ns, PDSO40
|
AMD
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| VCA3-B6C-25M00 VCA3-F3D-25M00 VCA3-E2H-25M00 VCA3- |
CRYSTAL OSCILLATOR, CLOCK, 0.32768 MHz - 160 MHz, CMOS OUTPUT
3.3, 5.0 volt CMOS Oscillator
3.3, 5.0 volt CMOS Oscillator
|
Vectron International, Inc
Vectron International, ...
|
| A29L008UV-90 A29L008TV-90U A29L008TV-90 A29L008TV- |
90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory
1M X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory
1M X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
From old datasheet system
|
AMICC[AMIC Technology]
|
